Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions

被引：11

作者：

Gentils, A. ^{[1
]}

Barthe, M. -F. ^{[1
]}

Thome, L. ^{[2
]}

Behar, M. ^{[3
]}

机构：

[1] CNRS, F-45071 Orleans 2, France

[2] Univ Paris 11, CSNSM, CNRS IN2P3, F-91405 Paris, France

[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 01期

关键词：

positron annihilation; point defects and defect clusters; semiconductors; radiation damage;

D O I：

10.1016/j.apsusc.2008.05.166

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：78 / 80

页数：3

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