Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3

被引：51

作者：

Muenstermann, Ruth ^{[1
]}

Dittmann, Regina ^{[1
]}

Szot, Krzysztof ^{[1
]}

Mi, Shaobo ^{[1
]}

Jia, Chun-Lin ^{[1
]}

Meuffels, Paul ^{[1
]}

Waser, Rainer ^{[1
]}

机构：

[1] Forschungszentrum, Inst Solid State Res, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2959074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R-off to R-on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy. (C) 2008 American Institute of Physics.

引用

页数：3

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