Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

被引：12

作者：

Chawanda, A. ^{[1
,2
]}

Roro, K. T. ^{[3
]}

Auret, F. D. ^{[1
]}

Mtangi, W. ^{[1
]}

Nyamhere, C. ^{[4
]}

Nel, J. ^{[1
]}

Leach, L. ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Midlands State Univ, Dept Phys, Gweru, Zimbabwe

[3] CSIR Natl Laser Ctr, ZA-0001 Pretoria, South Africa

[4] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2010年 / 13卷 / 5-6期

基金：

新加坡国家研究基金会;

关键词：

Barrier height; Germanium; Metal-semiconductor; Ideality factor; Inhomogeneity; INDUCED GAP STATES; TEMPERATURE-DEPENDENCE; ELECTRON-TRANSPORT; IDEALITY FACTORS; VOLTAGE; CONTACTS;

D O I：

10.1016/j.mssp.2011.05.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5 x 10(15) cm(-3). The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at a temperature of 296 K. The effective barrier heights from I-V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance-voltage (C-2-V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I-V and (C-2-V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：371 / 375

页数：5

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