The Behavior of FAB (Free Air Ball) and HAZ (Heat Affected Zone) in fine gold wire

被引：12

作者：

Hong, SJ ^{[1
]}

Cho, JS ^{[1
]}

Moon, JT ^{[1
]}

Lee, J ^{[1
]}

机构：

[1] MK Electron Co LTD, R&D, Yongin 449810, South Korea

来源：

ADVANCES IN ELECTRONIC MATERIALS AND PACKAGING 2001 | 2001年

关键词：

D O I：

10.1109/EMAP.2001.983957

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The trend of high integration and miniaturization of semiconductor has accelerated the development of gold bonding wire with smaller diameter. For the stable bonding of fine wire, it is important to characterize the wire with various diameters during the bonding process. To investigate this relationship, the experiments were done for the various sizes of wire diameter and FAB. The wire size and the FAB size were chosen for the test from 15 um to 25 um and from 1.4 WD (Wire Diameter) to 2.0 WD, respectively. The results showed that as the size of FAB became smaller, the size deviation of FAB increased and FAB itself was tilted to one side. When FAB was formed at the same parameter, the length of HAZ became shorter for the wire with the high temperature of recrystallization. It is also revealed that the length of HAZ decreased for the smaller size of FAB. This phenomenon is considered to be related to the heat generated during the FAB formation.

引用

页码：52 / 55

页数：4