Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells

被引：40
作者：
Ok, Young-Woo [1 ]
Upadhyaya, Ajay D. [1 ]
Tao, Yuguo [1 ]
Zimbardi, Francesco [1 ]
Ryu, Kyungsun [1 ]
Kang, Moon-Hee [1 ]
Rohatgi, Ajeet [1 ,2 ]
机构：
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] Suniva Inc, Norcross, GA 30092 USA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 123卷
关键词：
N-type Si Solar cell; Implantation; Al2O3; passivation; Screen printing; P-TYPE; LIFETIME;
D O I：
10.1016/j.solmat.2014.01.002
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper reports on the fabrication of high efficiency (similar to 20%) front junction n-type Si solar cells on 239 cm(2) Cz using ion implanted boron emitter and phosphorus back surface field (BSF) in combination with screen printed metallization. Cell efficiencies of 19.8% and 20.0% were achieved with SiO2/SiNx and Al2O3/SiNx passivation of boron implanted emitter, respectively, supporting the superiority of Al2O3 passivation. This is consistent with low boron emitter saturation current densities of 76 and 45 fA/cm(2) achieved for boron emitter passivated with SiO2/SiNx and Al2O3/SiNx stacks, respectively. Saturation current density in metal contact area of boron emitter and phosphorus BSF was measured directly by varying the metal contact coverage. Detailed analysis of saturation current density showed that the performance of our 20% is largely limited by saturation current density associated with recombination on metal contact area of boron emitter and bulk of phosphorus BSF, which accounted for almost 50% of the total saturation current density. (C) 2014 Elsevier B.V. All rights reserved.
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页码：92 / 96
页数：5
相关论文
共 16 条
[1]   High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J].
Benick, Jan ;
Hoex, Bram ;
van de Sanden, M. C. M. ;
Kessels, W. M. M. ;
Schultz, Oliver ;
Glunz, Stefan W. .
APPLIED PHYSICS LETTERS, 2008, 92 (25)
[2]   Thermal stability of the Al2O3 passivation on p-type silicon surfaces for solar cell applications [J].
Benick, Jan ;
Richter, Armin ;
Hermle, Martin ;
Glunz, Stefan W. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (7-8) :233-235
[3]   Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon [J].
Bothe, K ;
Sinton, R ;
Schmidt, J .
PROGRESS IN PHOTOVOLTAICS, 2005, 13 (04) :287-296
[4]   P-type versus n-type silicon wafers: Prospects for high-efficiency commercial silicon solar cells [J].
Cotter, J. E. ;
Guo, J. H. ;
Cousins, P. J. ;
Abbott, M. D. ;
Chen, F. W. ;
Fisher, K. C. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (08) :1893-1901
[5]   Measuring and interpreting the lifetime of silicon wafers [J].
Cuevas, A ;
Macdonald, D .
SOLAR ENERGY, 2004, 76 (1-3) :255-262
[6]  
Das A., 2011, 2011000158000164 IEE
[7]   20% Efficient Screen-Printed n-Type Solar Cells Using a Spin-On Source and Thermal Oxide/Silicon Nitride Passivation [J].
Das, Arnab ;
Ryu, Kyungsun ;
Rohatgi, Ajeet .
IEEE JOURNAL OF PHOTOVOLTAICS, 2011, 1 (02) :146-152
[8]   Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 [J].
Hoex, B. ;
Schmidt, J. ;
Bock, R. ;
Altermatt, P. P. ;
van de Sanden, M. C. M. ;
Kessels, W. M. M. .
APPLIED PHYSICS LETTERS, 2007, 91 (11)
[9]   Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes [J].
Kessler, Michael Andreas ;
Ohrdes, Tobias ;
Wolpensinger, Bettina ;
Harder, Nils-Peter .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (05)
[10]   Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon [J].
Macdonald, D ;
Geerligs, LJ .
APPLIED PHYSICS LETTERS, 2004, 85 (18) :4061-4063
12