Evidence for topological band inversion of the phase change material Ge2Sb2Te5

被引：28
作者：
Pauly, Christian [1 ,2 ]
Liebmann, Marcus [1 ,2 ]
Giussani, Alessandro [3 ]
Kellner, Jens [1 ,2 ]
Just, Sven [1 ,2 ]
Sanchez-Barriga, Jaime [4 ]
Rienks, Emile [4 ]
Rader, Oliver [4 ]
Calarco, Raffaella [3 ]
Bihlmayer, Gustav [5 ,6 ,7 ]
Morgenstern, Markus [1 ,2 ]
机构：
[1] Rhein Westfal TH Aachen, Inst Phys B 2, D-52074 Aachen, Germany
[2] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany
[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[4] Helmholtz Zentrum Mat & Energie, Elektronenspeicherring BESSY 2, D-12489 Berlin, Germany
[5] Forschungszentrum Julich, Peter Grunberg Inst PGI 1, D-52425 Julich, Germany
[6] Forschungszentrum Julich, Inst Adv Simulat IAS 1, D-52425 Julich, Germany
[7] JARA, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 24期
关键词：
SINGLE DIRAC CONE; THIN-FILMS; METASTABLE GE2SB2TE5; ELECTRON-DIFFRACTION; CRYSTAL-STRUCTURE; INSULATOR; MEMORY; SURFACE; BEHAVIOR;
D O I：
10.1063/1.4847715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at (Gamma) over bar being 0.3 eV below the Fermi level E-F and a circular Fermi contour around (Gamma) over bar with a dispersing diameter of 0.27-0.36 angstrom(-1). This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic Kooi-De Hosson stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z(2) topological invariant nu(0) and away from Gamma for non-trivial nu(0). Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E-F. (C) 2013 AIP Publishing LLC.
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页数：4
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