Numerical simulation and performance optimization of Sb2S3 solar cell with a hole transport layer

被引：76
作者：
Xiao, Youpeng [1 ,2 ]
Wang, Huaiping [1 ,2 ]
Kuang, Hai [3 ]
机构：
[1] East China Univ Technol, Sch Mech & Elect Engn, Nanchang 330013, Jiangxi, Peoples R China
[2] East China Univ Technol, Minist Educ, Engn Res Ctr Nucl Technol Applicat, Nanchang, Jiangxi, Peoples R China
[3] Jiangxi Sci & Technol Normal Univ, Sch Mat & Mechatron, Nanchang 330038, Jiangxi, Peoples R China
来源：
OPTICAL MATERIALS | 2020年 / 108卷
关键词：
Sb2S3 Solar cell; ZnS; Cu2O; Bulk defects; Interface defects; Simulation; EFFICIENCY; CU2O; FILMS;
D O I：
10.1016/j.optmat.2020.110414
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Antimony sulfide (Sb2S3) solar cell is considered to be an emerging photovoltaic device technology. However, the conversion efficiency of Sb2S3 solar cell remains limited to lower than 8%. To boost the conversion efficiency, a device structure consists of FTO/ZnS/Sb2S3/Cu2O/Au was proposed and the device photovoltaic performance has been numerical simulated by wxAMPS. The initial values of bulk defect density in Sb2S3 layer and interface defect density at ZnS/Sb2S3 and Sb2S3/Cu2O interfaces are set to be 10(16) cm(-3), 10(10) cm(-2) and 10(10) cm(-2), respectively. The conversion efficiency increases from 6.24% to 16.65% by incorporating a Cu2O layer into the solar cell. The influence of Sb2S3 bulk material quality on device photovoltaic performance was also analyzed. It is important to note that a proper higher carrier diffusion length than the thickness of Sb2S3 layer should be guaranteed to facilitate the conversion of photogenerated electron-hole pairs to photogenerated current. It is feasible to achieve a value of 10(15) cm(-3) for bulk defect density in Sb2S3 layer (corresponding diffusion length is calculated to 1.6 mu m) in further experimental work, then the optimized conversion efficiency of 21.99% at an optimized Sb2S3 layer thickness of 0.8 mu m could be arrived. Furthermore, the influence of interface defects at ZnS/Sb2S3 and Sb2S3/Cu2O interfaces on device photovoltaic performance were also analyzed. It is feasible to achieve a value of 10(9) cm(-2) for interface defect density at ZnS/Sb2S3 and Sb2S3/Cu2O interfaces and a best conversion efficiency of 22.78% can be obtained.
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页数：10
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