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Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides
被引:67
|作者:
Shan, Wen-Yu
[1
]
Lu, Hai-Zhou
[2
,3
]
Xiao, Di
[1
]
机构:
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
关键词:
MOS2;
POLARIZATION;
D O I:
10.1103/PhysRevB.88.125301
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.
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页数:8
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