Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides
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作者:
Shan, Wen-Yu
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Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USACarnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
Shan, Wen-Yu
[1
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Lu, Hai-Zhou
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R ChinaCarnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
Lu, Hai-Zhou
[2
,3
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Xiao, Di
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Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USACarnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
Xiao, Di
[1
]
机构:
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.
机构:
Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USAUniv Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
Yang, Zhili
Aghaeimeibodi, Shahriar
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Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USAUniv Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
Aghaeimeibodi, Shahriar
Waks, Edo
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Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
Univ Maryland, Joint Quantum Inst, College Pk, MD 20742 USA
NIST, College Pk, MD 20742 USAUniv Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
机构:
CSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
Donostia Int Phys Ctr DIPC, San Sebastian 20018, SpainCSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
Ochoa, Hector
Finocchiaro, Francesca
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CSIC, Inst Ciencias Mat Madrid, Madrid 28049, SpainCSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
Finocchiaro, Francesca
Guinea, Francisco
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CSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, EnglandCSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
Guinea, Francisco
Fal'ko, Vladimir I.
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Univ Lancaster, Dept Phys, Lancaster LA1 4YB, EnglandCSIC, Inst Ciencias Mat Madrid, Madrid 28049, Spain
机构:
Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, JapanHong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong 999077, Peoples R China
Taguchi, Katsuhisa
Kawaguchi, Yuki
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Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, JapanHong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong 999077, Peoples R China
Kawaguchi, Yuki
Tanaka, Yukio
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Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, JapanHong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong 999077, Peoples R China
Tanaka, Yukio
Law, K. T.
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Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong 999077, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong 999077, Peoples R China
机构:
MIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
Qian, Xiaofeng
Liu, Junwei
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MIT, Dept Phys, Cambridge, MA 02139 USAMIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
Liu, Junwei
Fu, Liang
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MIT, Dept Phys, Cambridge, MA 02139 USAMIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
Fu, Liang
Li, Ju
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机构:
MIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA