Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

被引:67
|
作者
Shan, Wen-Yu [1 ]
Lu, Hai-Zhou [2 ,3 ]
Xiao, Di [1 ]
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
关键词
MOS2; POLARIZATION;
D O I
10.1103/PhysRevB.88.125301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.
引用
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页数:8
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