Controlling the Orientation, Edge Geometry, and Thickness of Chemical Vapor Deposition Graphene

被引：179

作者：

Murdock, Adrian T. ^{[1
]}

Koos, Antal ^{[1
]}

Ben Britton, T. ^{[1
]}

Houben, Lothar ^{[2
]}

Batten, Tim ^{[3
]}

Zhang, Tong ^{[3
]}

Wilkinson, Angus J. ^{[1
]}

Dunin-Borkowski, Rafal E. ^{[2
]}

Lekka, Christina E. ^{[4
]}

Grobert, Nicole ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[2] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany

[3] Renishaw Plc, Gloucester GL12 7DW, England

[4] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece

来源：

ACS NANO | 2013年 / 7卷 / 02期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会;

关键词：

graphene; CVD; Cu; orientation; crystallography; EBSD; GRAIN-BOUNDARIES; HIGH-QUALITY; GROWTH; FILMS; TEMPERATURE; HYDROGEN; FLAKES; SHAPE;

D O I：

10.1021/nn3049297

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single (101) direction on Cu(111) and Cu(101), while bilayer domains align to two directions on Cu(001). Under atmospheric pressure conditions, hexagonal domains also preferentially align. This discovery can be exploited to generate high-quality, tailored graphene with controlled domain thickness, orientations, edge geometries, and grain boundaries.

引用

页码：1351 / 1359

页数：9

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