Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates:: Application to X-band low noise amplifiers

被引：0

作者：

De Jaeger, J. C. ^{[1
]}

Delage, S. L. ^{[1
]}

Dambrine, G. ^{[1
]}

Poisson, M. A. Di Forte ^{[1
]}

Hoel, V. ^{[1
]}

Lepilliet, S. ^{[1
]}

Grimbert, B. ^{[1
]}

Morvan, E. ^{[1
]}

Mancuso, Y. ^{[1
]}

Gauthier, G. ^{[1
]}

Lefrancois, A. ^{[1
]}

Cordier, Y. ^{[1
]}

机构：

[1] Univ Lille, TIGER IEMN, F-59652 Villeneuve Dascq, France

来源：

GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study regards the low noise properties of X-band GaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown on SiC or Si substrates. The HEMTs present very low noise properties with NFmin and G(ass) close to 1 dB and 13 dB at 12 GHz. The robustness tests show that the component withstands power level up to 34 dBm. A two-stages X-band LNA is fabricated showing a noise figure of 1.7 dB with a gain of 20 dB at 10 GHz.

引用

页码：229 / 232

页数：4

共 4 条

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