Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates:: Application to X-band low noise amplifiers

被引：0

作者：

De Jaeger, J. C. ^{[1
]}

Delage, S. L. ^{[1
]}

Dambrine, G. ^{[1
]}

Poisson, M. A. Di Forte ^{[1
]}

Hoel, V. ^{[1
]}

Lepilliet, S. ^{[1
]}

Grimbert, B. ^{[1
]}

Morvan, E. ^{[1
]}

Mancuso, Y. ^{[1
]}

Gauthier, G. ^{[1
]}

Lefrancois, A. ^{[1
]}

Cordier, Y. ^{[1
]}

机构：

[1] Univ Lille, TIGER IEMN, F-59652 Villeneuve Dascq, France

来源：

GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study regards the low noise properties of X-band GaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown on SiC or Si substrates. The HEMTs present very low noise properties with NFmin and G(ass) close to 1 dB and 13 dB at 12 GHz. The robustness tests show that the component withstands power level up to 34 dBm. A two-stages X-band LNA is fabricated showing a noise figure of 1.7 dB with a gain of 20 dB at 10 GHz.

引用

页码：229 / 232

页数：4

共 50 条

[1] Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers
Lee, JW
Kuliev, A
Kumar, V
Schwindt, R
Adesida, I
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2004, 14 (06) : 259 - 261
[2] Wideband AlGaN/GaN HEMTs on SiC for low noise applications
Lu, Wu
Yang, J.W.
Khan, M.Asif
Adesida, Ilesanmi
Annual Device Research Conference Digest, 2000, : 39 - 40
[3] X-band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate
Chang, Woojin
Jeon, Gye-Ik
Park, Young-Rak
Lee, Sangheung
Mun, Jae-Kyoung
2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 681 - 684
[4] X-band MMIC low noise amplifiers
Krutov, A. V.
Rebrov, A. S.
2006 16TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2006, : 183 - +
[5] Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates
Hoel, V.
Defrance, N.
Douvry, Y.
De Jaeger, J. C.
Vellas, N.
Gaquiere, C.
di Forte-Poisson, M. A.
Thorpe, J.
Langer, R.
ELECTRONICS LETTERS, 2010, 46 (01) : 84 - U117
[6] Robustness of GaN on SiC low-noise amplifiers in common source and cascode configurations for X-band applications
Nawaz, Muhammad Imran
Zafar, Salahuddin
Gurdal, Armagan
Akoglu, Busra Cankaya
Ozbay, Ekmel
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2024, 52 (08) : 4148 - 4163
[7] Low frequency drain noise in AlGaN/GaN HEMTs on Si substrate
Malbert, N
Labat, N
Curutchet, A
Touboul, A
Gaquière, C
Minko, A
NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 342 - 349
[8] Robust X-Band Low Noise Limiting Amplifiers
Schuh, Patrick
Reber, Rolf
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
[9] Phaw noise study of AlGaN/GaN HEMT X-band oscillator
Danylyuk, SV
Vitusevich, SA
Kaper, V
Tilak, V
Klein, N
Eastman, LF
Shealy, JR
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2615 - 2618
[10] Low 1/f noise in AlGaN/GaN HFETs on SiC substrates
Rumyantsev, S
Levinshtein, ME
Gaska, R
Shur, MS
Khan, A
Yang, JW
Simin, G
Ping, A
Adesida, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 201 - 204

← 1 2 3 4 5 →