Structural, morphological and electronic study of CVD SnO2:Sb films

被引：26

作者：

Haireche, S.

Boumeddiene, A.

Guittoum, A. ^{[1
]}

El Hdiy, A. ^{[2
]}

Boufelfel, A. ^{[3
]}

机构：

[1] CRNA, Algiers 16000, Algeria

[2] Univ Reims, Lab LMEN, Reims, France

[3] Univ 08 Mai 45, Lab Phys, Guelma 24000, Algeria

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2013年 / 139卷 / 2-3期

关键词：

Oxides; Thin films; Chemical vapour deposition (CVD); Atomic force microscopy (AFM); Rutherford backscattering spectroscopy (RBS); Electrical properties; INDIUM-TIN-OXIDE; CHEMICAL-VAPOR-DEPOSITION; SNO2-SB THIN-FILMS; ELECTRICAL-PROPERTIES; FLUORINE;

D O I：

10.1016/j.matchemphys.2013.02.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have prepared solid thin film samples of SnO2:Sb in different ratios using atmospheric pressure chemical vapour deposition technique APCVD. The chemical composition was determined with Rutherford Backscattering Spectroscopy (RBS) within an error of 1%. X-ray diffraction was used to study the influence of Sb concentration on the lattice parameters and preferred orientations. We have found that sample of concentration 4% showed a (200) preferred orientation. The AFM and SEM images showed that the surface roughness of our samples was influenced by the doping concentrations. The lowest electrical surface resistance was 8.0 Omega square(-1) for a 3% concentration sample. We found that the contribution to the metallic state is influenced by oxygen vacancy and Sb doping. Also, the sample of good electrical conductive property has an optical gap of 3.60 eV band at room temperature. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：871 / 876

页数：6

共 38 条

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