Thermoelectric Properties of Bi0.5Sb1.5Te3 Prepared by Liquid-Phase Growth Using a Sliding Boat

被引:2
作者
Kitagawa, Hiroyuki [1 ]
Takino, Teppei [1 ]
Tsukutani, Tatsuya [1 ]
Kato, Toshihito [2 ]
Nanba, Masao [3 ]
Kamata, Kin-Ya [3 ]
机构
[1] Shimane Univ, Dept Mat Sci, Matsue, Shimane 6908504, Japan
[2] Mitsui Engn & Shipbldg Co Ltd, Chiba Technol Ctr, Ichihara, Chiba 2908531, Japan
[3] Mitsui Engn & Shipbldg Co Ltd, Tamano Technol Ctr, Okayama 7060014, Japan
基金
日本学术振兴会;
关键词
Bismuth-antimony telluride; liquid-phase growth; thermoelectric property; carrier concentration; CHANNEL ANGULAR EXTRUSION; TRANSPORT-PROPERTIES; SINGLE-CRYSTAL; BI2TE3; COMPOUND; DEFECTS; TEXTURE;
D O I
10.1007/s11664-013-2518-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A liquid-phase growth process using a graphite sliding boat was applied for synthesis of p-type Bi0.5Sb1.5Te3. The process lasted only 60 min, including rapid heating for melting, boat-sliding, and cooling. Thick sheets and bars of 1 mm and 2 mm in thickness having preferable crystal orientation for thermoelectric conversion were successfully prepared by the process. Control of carrier concentration was attempted through addition of excess tellurium (1 mass% to 10 mass%) to optimize the thermoelectric properties of the material. The Hall carrier concentration was found to be decreased by addition of excess tellurium. The electrical resistivity and Seebeck coefficient varied depending on the carrier concentration. As a result, the maximum observed power factor near 300 K was 4.4 x 10(-3) W/K(2)m, with corresponding Hall carrier concentration of 4.6 x 10(25) m(-3). Thus, thermoelectric properties were controllable by addition of excess tellurium, and a large power factor was thus obtained through a simple and short process.
引用
收藏
页码:2043 / 2047
页数:5
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