Design of rectifier diode temperature compensation circuit in flyback converter

被引：5
|
作者：
Shi, L. F. [1 ,2 ]
Chang, Y. J. [1 ,2 ]
He, H. S. [1 ,2 ]
Nie, H. Y. [1 ,2 ]
Zhao, Y. R. [1 ,2 ]
机构：
[1] Xidian Univ, Inst Elect CAD, Xian 710071, Shaanxi, Peoples R China
[2] Xidian Univ, Minist Educ, Key Lab High Speed Circuit Design & EMC, Xian 710071, Shaanxi, Peoples R China
来源：
IET CIRCUITS DEVICES & SYSTEMS | 2012年 / 6卷 / 04期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1049/iet-cds.2011.0254
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A rectifier diode temperature compensation circuit is presented for primary-side controlled flyback converter. By compensating the variation of secondary-side rectifier diode forward voltage with temperature, the error rate of output voltage in flyback converter will be effectively improved at high temperature. The design of the circuit is based on the negative temperature characteristics of the base-emitter voltage V-BE of bipolar transistors. Besides, the circuit can also provide over-temperature protection. Results of simulation based on 0.5 mu m bipolar complementary metal oxide semi-conductor process show that the compensation voltage is 0.1 V at 125 degrees C and 0 V at 25 degrees C. The maximum output voltage error rate of flyback converter with compensation is from 3.8 to 0.6% under the temperature between 25 and 125 degrees C. The thermal shutdown threshold is 140 degrees C, and the over-temperature protection hysteresis threshold is 110 degrees C.
引用
收藏
页码：246 / 251
页数：6
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