Effects of graphene on the thermal conductivity of pressureless-sintered SiC ceramics

被引：71

作者：

Li, Qisong ^{[1
,2
]}

Zhang, Yujun ^{[1
,2
]}

Gong, Hongyu ^{[1
,2
]}

Sun, Haibin ^{[1
,2
]}

Li, Teng ^{[1
,2
]}

Guo, Xue ^{[1
,2
]}

Ai, Shuhe ^{[1
,2
]}

机构：

[1] Shandong Univ, Minist Educ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Jinan 250061, Peoples R China

[2] Shandong Univ, Minist Educ, Key Lab Special Funct Aggregated Mat, Jinan 250061, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2015年 / 41卷 / 10期

关键词：

Defects; Thermal conductivity; SiC; Graphene; SILICON-CARBIDE; HEAT-EXCHANGER;

D O I：

10.1016/j.ceramint.2015.07.149

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC ceramics with graphene additives have been fabricated by a pressureless-sintered method. The effects of graphene contents on the densification, thermal conductivity, electrical conductivity, phase compositions, and microstructure evolutions of the SiC ceramics were investigated in detail. As the graphene content increased from 0 to 5.0 wt%, the relative density of the SiC samples monotonically decreased, the electrical conductivity monotonically increased, whereas the thermal conductivity initially increased and then decreased. The highest thermal conductivity of 145.14 W/(m K) was obtained for SiC sample with 2.0 wt% graphene sintered at 2130 degrees C for 1 h in Ar. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：13547 / 13552

页数：6

共 21 条

[1] Characterization of hot-pressed graphene reinforced ZrB2-SiC composite [J].

Asl, Mehdi Shahedi ;

Kakroudi, Mandi Ghasserni .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2015, 625 :385-392

[2] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[3] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[4]

Biswas K, 2009, MATER SCI FORUM, V624, P71, DOI 10.4028/www.scientific.net/MSF.624.71

[5] Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications [J].

Joshi, RP ;

Neudeck, PG ;

Fazi, C .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :265-269

[6]

Kingery W. D., 1976, INTRO CERAMICS, P634

[7] Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy [J].

Lauffer, P. ;

Emtsev, K. V. ;

Graupner, R. ;

Seyller, Th. ;

Ley, L. ;

Reshanov, S. A. ;

Weber, H. B. .

PHYSICAL REVIEW B, 2008, 77 (15)

[8] Measurement of the elastic properties and intrinsic strength of monolayer graphene [J].

Lee, Changgu ;

Wei, Xiaoding ;

Kysar, Jeffrey W. ;

Hone, James .

SCIENCE, 2008, 321 (5887) :385-388

[9] Thermal conductivity in hot-pressed silicon carbide [J].

Liu, DM ;

Lin, BW .

CERAMICS INTERNATIONAL, 1996, 22 (05) :407-414

[10] Microstructural characterization of high-thermal-conductivity SiC ceramics [J].

Nakano, H ;

Watari, K ;

Kinemuchi, Y ;

Ishizaki, K ;

Urabe, K .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (14) :3685-3690

← 1 2 3 →