Binary halftone chromeless PSM technology for λ/4 optical lithography

被引:46
作者
Chen, JF [1 ]
Petersen, JS [1 ]
Socha, R [1 ]
Laidig, T [1 ]
Wampler, KE [1 ]
Nakagawa, K [1 ]
Hughes, G [1 ]
MacDonald, S [1 ]
Ng, W [1 ]
机构
[1] ASML MaskTools Inc, Santa Clara, CA 95054 USA
来源
OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷
关键词
chromeless PSM; CLM; high NA; off-axis illumination; OAI; QUASAR; OPC; PSM; halftone; proximity effect;
D O I
10.1117/12.435751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Binary halftone chromeless PSM (CLM) can be described as a 100% transmission attenuated PSM (attPSM). The term "binary halftone" refers to a novel OPC application to achieve the necessary CD control across the full feature-pitch range. We find that CLM is very complimentary -with high numerical aperture (NA) and with off-axis illumination (OAI). In our wafer-printing experiment, we have achieved 70nm through-pitch printing performance, using a KrF resist process. This was done in combination with a rule-based SB-OPC approach. At least 0,4 mum overlapped DOF with more than 6% exposure latitude has been attained for sub-100nm printed features. For 2D complex patterns, we have observed a very strong optical proximity effect. CLM appears to be more sensitive to proximity effects, but less sensitive to lens aberration effects. Further experimentation and verification is required. Current mask-making processes appear to be capable of manufacturing CLM. We conclude that CLM has great potential to achieving production-worthy lambda/4 (or 0.2k(1)) lithography. The technology risk is neither in mask making nor in application software, but may be in reticle inspection and repair.
引用
收藏
页码:515 / 533
页数:19
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