Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

被引：30
作者：
Hwang, Hyeon Jun [1 ]
Yang, Jin Ho [1 ]
Lee, Young Gon [1 ]
Cho, Chunhum [2 ]
Kang, Chang Goo [1 ]
Kang, Soo Cheol [1 ]
Park, Woojin [1 ]
Lee, Byoung Hun [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
来源：
NANOTECHNOLOGY | 2013年 / 24卷 / 17期
基金：
新加坡国家研究基金会;
关键词：
PIEZOELECTRIC BETA-POLYMORPH; FIELD-EFFECT TRANSISTORS; EPITAXIAL GRAPHENE; NANOCOMPOSITE FILMS; WAFER; ENHANCEMENT;
D O I：
10.1088/0957-4484/24/17/175202
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric polymer (PVDF-TrFE)/graphene stack has been demonstrated. The conductivity of this metal-ferroelectric-graphene (MFG) device could be modulated up to 775% with a very fast programming speed down to 10 ns. Also, programmed states were maintained up to 1000 s with endurance over 1000 cycles. In addition to demonstrating a single memory device, the array-level integration and cell write/read functionality of a 4 x 4 MFG array adopting a graphene bit line has also been confirmed to show the feasibility of MFG memory.
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页数：6
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