Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE

被引：7

作者：

Anazawa, Kazehiko ^{[1
]}

Hassanet, Sodabanlu ^{[2
]}

Fujii, Katsushi ^{[2
]}

Nakano, Yoshiaki ^{[1
,2
]}

Sugiyama, Masakazu ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1138656, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷

关键词：

Metalorganic vapor phase epitaxy; Quantum wells; Nitrides; Semiconducting III-V materials; Infrared devices; Solar cells;

D O I：

10.1016/j.jcrysgro.2012.08.050

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strain-compensated InGaN/AlN MQWs were grown on a c-plane GaN/sapphire template by MOVPE at 780 degrees C. After optimization of its growth conditions, several samples of InGaN/AlN MQWs with varied well and barrier thicknesses were prepared in order to find the best balance of each layer thickness. Strains inside the MQWs were evaluated by reciprocal space mapping (RSM) measurements, and the results were quite consistent with the calculation of strain estimation. Characterization by HRXRD and photoluminescence measurements revealed an impact of strain accumulation on the quality of MQWs, and the best results were obtained in the most strain-compensated InGaN/AlN MQWs. Compared with InGaN/GaN MQWs with the same thicknesses of wells and barriers, InGaN/AlN MQWs proved to have promising characteristics for several optical devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：82 / 86

页数：5

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