Diffusion layer model for pulse reverse plating

被引:22
作者
Chang, L. M. [1 ]
机构
[1] Jilin Normal Univ, Ctr Anal & Measurement, Siping 136000, Peoples R China
关键词
Plating; Pulse; Diffusion; Model;
D O I
10.1016/j.jallcom.2007.11.125
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper proposes a duplex diffusion layer model, based on IN theory, to evaluate the diffusion process of pulse plating with reverse current and relaxation period. In any conditions, the interfacial concentration C for pulse reverse plating is always higher than that for single pulse plating, it is beneficial to employ higher current density that enhances the cathode polarization effect. However, it should be ensured that t(c) < t(a) in the plating process to gain higher peak pulse current density that could enhance the cathode polarization effect and increase the nucleation rate. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:L19 / L22
页数:4
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