Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

被引：76

作者：

Atkinson, P. ^{[1
]}

Kiravittaya, S. ^{[1
]}

Benyoucef, M. ^{[1
,2
]}

Rastelli, A. ^{[2
]}

Schmidt, O. G. ^{[2
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.2980445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Site-controlled growth of single and pairs of InAs quantum dots is demonstrated on ex situ electron-beam patterned (001) GaAs substrates using in situ Ga-assisted deoxidation prior to overgrowth. 6-8 ML of gallium deposited at a substrate temperature of 460 C in the absence of arsenic followed by a brief anneal under arsenic is used to remove the surface oxide without damaging a pattern consisting of similar to 100 nm wide, similar to 20 nm deep holes. Single dot luminescence is shown from a dilute array (10 mu m spacing) of such site-controlled dots, located only 8 nm from the regrowth interface. (C) 2008 American Institute of Physics.

引用

页数：3

共 23 条

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