Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

被引：76
作者：
Atkinson, P. [1 ]
Kiravittaya, S. [1 ]
Benyoucef, M. [1 ,2 ]
Rastelli, A. [2 ]
Schmidt, O. G. [2 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.2980445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Site-controlled growth of single and pairs of InAs quantum dots is demonstrated on ex situ electron-beam patterned (001) GaAs substrates using in situ Ga-assisted deoxidation prior to overgrowth. 6-8 ML of gallium deposited at a substrate temperature of 460 C in the absence of arsenic followed by a brief anneal under arsenic is used to remove the surface oxide without damaging a pattern consisting of similar to 100 nm wide, similar to 20 nm deep holes. Single dot luminescence is shown from a dilute array (10 mu m spacing) of such site-controlled dots, located only 8 nm from the regrowth interface. (C) 2008 American Institute of Physics.
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