Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

被引：25

作者：

Zhang, Feng ^{[1
,2
]}

Li, Xiaomin ^{[1
]}

Gao, Xiangdong ^{[1
]}

Wu, Liang ^{[1
,2
]}

Zhuge, Fuwei ^{[1
,2
]}

Wang, Qun ^{[1
]}

Liu, Xinjun ^{[3
]}

Yang, Rui ^{[4
]}

He, Yong ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

SOLID STATE COMMUNICATIONS | 2012年 / 152卷 / 17期

基金：

国家自然科学基金重大项目; 中国国家自然科学基金;

关键词：

Zinc oxide; Thin film; Resistive switching; NANOFILAMENTS;

D O I：

10.1016/j.ssc.2012.04.073

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient Zna(1-x) films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen vacancy content in ZnO films will lead to forming-free and narrower distributions of switching parameters (set and reset voltage, high and low resistance states). It indicates that controlling the initial oxygen vacancy content was an effective method to enhance the URS performance. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1630 / 1634

页数：5

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