Variable optical delays at 1.55 μm using fast light in an InAs/InP quantum dash based semiconductor optical amplifier

被引：8

作者：

Martinez, A. ^{[1
]}

Aubin, G. ^{[1
]}

Lelarge, F. ^{[2
]}

Brenot, R. ^{[2
]}

Landreau, J. ^{[2
]}

Ramdane, A. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Alcatel Thales 3 5 Lab, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 09期

关键词：

D O I：

10.1063/1.2973168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature optical variable delays are demonstrated using InAs/InP quantum dash semiconductor optical amplifiers (SOAs) at 1.55 mu m. A microwave frequency modulated single optical beam allows to demonstrate fast light through the achievement of maximum optical delays of 136 ps at 250 MHz and similar to 55 ps at 2 GHz by means of electrical control of the SOA bias current. The group index variation is attributed to enhanced nearly degenerate four wave mixing of this material system as well as population pulsation. (c) 2008 American Institute of Physics.

引用

页数：3

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