Investigation of buried quantum dots using grazing incidence X-ray diffraction

被引：7
|
作者：
Schroth, P. [2 ]
Slobodskyy, T. [1 ]
Grigoriev, D.
Minkevich, A.
Riotte, M. [2 ]
Lazarev, S. [2 ]
Fohtung, E. [5 ]
Hu, D. Z. [4 ]
Schaadt, D. M. [4 ]
Baumbach, T. [2 ,3 ]
机构：
[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany
[2] Karlsruhe Inst Technol, Inst Synchrotron Radiat, ANKA, D-76344 Eggenstein Leopoldshafen, Germany
[3] Karlsruhe Inst Technol, Lab Applicat Synchrotron Radiat, Karlsruhe, Germany
[4] KIT, DFG Ctr Funct Nanostructures, Inst Appl Phys, Karlsruhe, Germany
[5] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 10期
关键词：
Molecular beam epitaxy; Grazing incidence X-ray diffraction; Self-organized quantum dots; Annealing;
D O I：
10.1016/j.mseb.2011.10.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：721 / 724
页数：4
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