Enhanced thermoelectric performance of p-type SnSe doped with Zn

被引:125
作者
Li, J. C. [1 ,2 ]
Li, D. [1 ]
Qin, X. Y. [1 ]
Zhang, J. [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
关键词
Thermoelectric materials; SnSe doped; Hot-pressing;
D O I
10.1016/j.scriptamat.2016.08.009
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we have synthesized SnSe doped with zinc (Zn) and investigated the effect of Zn doping on the thermoelectric properties of SnSe. The results demonstrate that a high thermoelectric figure of merit (ZT) of 0.96 at 873 K is obtained for Zn0.01Sn0.99Se, which is 41% higher than that of pure SnSe (ZT = 0.68). The value is the highest value reported for p-type polycrystalline doped SnSe materials, which arises from the increased power factor coming from a high electrical conductivity and an enhanced Seebeck coefficient. (C) 2016 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:6 / 10
页数:5
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