Carrier-carrier scattering in GaAs/AlxGa1-xAs quantum wells

被引：2
作者：
Sun, KW [1 ]
Song, TS
Sun, CK
Wang, JC
Kane, MG
Wang, SY
Lee, CP
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan
[4] Sarnoff Corp, Princeton, NJ 08543 USA
[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.61.15592
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied carrier dynamics in highly nonequilibrium two-dimensional (2D) carrier distributions generated with femtosecond laser pulses in p-doped GaAs/Al0.32Ga0.68As quantum wells at photoexcited carrier densities between 10(9) and 10(11) cm(-2). The initially nonthermal carrier distribution is quickly broadened due to inelastic carrier-carrier scattering, with the broadening rate increasing as carrier density is increased. Measurements of the unrelaxed peak height in the hot electron-neutral acceptor luminescence spectra are compared with calculations of the carrier distribution using integration of the 2D dynamically screened Boltzmann equation. Our results indicate that carrier-carrier scattering becomes as significant a scattering mechanism as LO-phonon emission at density of about 10(10) cm(-2).
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页码：15592 / 15595
页数：4
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