Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

被引:35
作者
Rho, H [1 ]
Jackson, HE
Lee, S
Dobrowolska, M
Furdyna, JK
机构
[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 23期
关键词
D O I
10.1103/PhysRevB.61.15641
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at similar to 221 cm(-1) as well as an interface phonon at similar to 245 cm(-1). We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.
引用
收藏
页码:15641 / 15644
页数:4
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