Optical characterisation of self organized InAs/GaAs quantum dots grown by MBE

被引：6
|
作者：
Hjiri, M [1 ]
Hassen, F [1 ]
Maaref, H [1 ]
机构：
[1] Fac Sci Monastir, Lab Phys Semicond, Dept Phys, Monastir 5000, Tunisia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 74卷 / 1-3期
关键词：
optical characterisation; self organized InAs/GaAs quantum dots; molecular beam epitaxy;
D O I：
10.1016/S0921-5107(99)00571-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this report we have investigated the optical characterisation of 2ML InAs/GaAs sheet grown by molecular beam epitaxy on (001) substrates. In particular we have studied the excitation energy dependence of PL spectra. The results allow us to resolve the emission from quantum dots (QDs) and that from the copper (Cu) centre in the GaAs substrate. A fast red shift of PL energy and an anomalous behaviour of linewidth with increasing temperature were observed and attributed to the tunnelling process between nearby QDs and electron-phonon scattering process. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：253 / 258
页数：6
相关论文
共 50 条
  • [1] Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE
    Naceur, Syrine
    Smiri, Badreddine
    Maaref, Hassen
    Mghaieth, Ridha
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (17) : 22645 - 22653
  • [2] Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE
    Syrine Naceur
    Badreddine Smiri
    Hassen Maaref
    Ridha Mghaieth
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 22645 - 22653
  • [3] Self organized InAs quantum dots grown on patterned GaAs substrates
    Schramboeck, Matthias
    Schrenk, W.
    Roch, T.
    Andrews, A. M.
    Austerer, M.
    Strasser, G.
    MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1573 - 1576
  • [4] InAs(Sb) quantum dots grown on GaAS by MBE
    Sallet, V.
    Patriarche, G.
    Mauguin, O.
    Largeau, L.
    Travers, L.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3997 - +
  • [5] Optical characterisation of InAs/GaAs structures grown by MBE
    Hjiri, M
    Hassen, F
    Maaref, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 514 - 518
  • [6] InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE
    Bosacchi, A.
    Frigeri, P.
    Franchi, S.
    Allegri, P.
    Avanzini, V.
    Journal of Crystal Growth, 1997, 175-176 (pt 2): : 771 - 776
  • [7] InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE
    Bosacchi, A
    Frigeri, P
    Franchi, S
    Allegri, P
    Avanzini, V
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 771 - 776
  • [8] The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE
    Naceur, Syrine
    Choubani, Mohsen
    Smiri, Badreddine
    Maaref, Hassen
    Monier, Guillaume
    Robert-Goumet, Christine
    Sfaxi, Larbi
    Gruzza, Bernard
    Mghaieth, Ridha
    VACUUM, 2020, 172 (172)
  • [9] Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Hazdra, P.
    Voves, J.
    Oswald, J.
    Kuldova, K.
    Hospodkova, A.
    Hulicius, E.
    Pangrac, J.
    MICROELECTRONICS JOURNAL, 2008, 39 (08) : 1070 - 1074
  • [10] Photocurrent Spectroscopy of InAs/GaAs Quantum Dots Grown by Using MBE
    Jo, Hyun-Jun
    Bae, In-Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (05) : 787 - 790
12345