Manifestation of T-exciton migration in the kinetics of singlet fission in organic semiconductors

被引:18
|
作者
Shushin, A. I. [1 ]
机构
[1] Russian Acad Sci, Inst Chem Phys, GSP 1,Kosygin Str 4, Moscow 119991, Russia
基金
俄罗斯基础研究基金会;
关键词
Singlet fission; Triplet excitons; Magnetic field effects; Diffusion assisted processes; SPIN-LATTICE-RELAXATION; THIN-FILMS; ANNIHILATION; RECOMBINATION; MODEL; WELL;
D O I
10.1016/j.cplett.2017.04.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Singlet fission (SF) in organic semiconductors, i.e. spontaneous splitting of the excited singlet (S-1) state into triplet (T) exciton pair, is known to be strongly influenced by back annihilation of TT-pair. We show that this influence is properly described only by taking into account diffusive exciton migration (EM). Within the model of two states (states of interacting TT-pairs and migrating excitons) the SF is studied by analyzing the kinetics I-s1(t) of decay of fluorescence from S-1-state. Analysis shows that the EM strongly manifests itself in the kinetics resulting, in particular, in long-time dependence Is(1)(t) similar to t-(3/2). The model accurately describes Is(1)(t), recently observed for a number of semiconductors. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:283 / 288
页数:6
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