In-situ etching of InP in MOVPE chamber using PCl3

被引：0
|
作者：
Ougazzaden, A [1 ]
Peticolas, L [1 ]
Chu, SNG [1 ]
机构：
[1] Agere Syst, Breinigsville, PA 18031 USA
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | 2002年 / 2002卷 / 03期
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D O I：
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中图分类号：
R5 [内科学];
学科分类号：
1002 ; 100201 ;
摘要：
In this work, we investigate in-situ etching of InP inside a MOVPE chamber for various etching conditions. Phosphorus Trichloride (PCl3) has been used as gaseous for etching. Precise control of the vertical and lateral etching as a function of the etch conditions has been achieved. With SiO2 stripes, mesa shapes with smooth non re-entrant sidewall I I I planes were formed in the large range of etch temperature and pressure. Deep selective area mesa etching (4 micron) followed by regrowth having excellent surface morphology and perfect planarity were obtained.
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页码：253 / 257
页数：5
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