Self-frequency-doubled KTiOAsO4 Raman laser emitting at 573 nm

被引：36

作者：

Liu, Zhaojun ^{[1
,2
]}

Wang, Qingpu ^{[1
]}

Zhang, Xingyu ^{[1
]}

Zhang, Sasa ^{[1
]}

Chang, Jun ^{[1
]}

Fan, Shuzhen ^{[1
]}

Sun, Wenjia ^{[1
]}

Jin, Guofan ^{[1
]}

Tao, Xutang ^{[2
]}

Sun, Youxuan ^{[2
]}

Zhang, Shaojun ^{[2
]}

Liu, Zejin ^{[3
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China

来源：

OPTICS LETTERS | 2009年 / 34卷 / 14期

关键词：

ALL-SOLID-STATE; EYE-SAFE LASER; CRYSTAL; YELLOW; BA(NO3)(2); GENERATION; SCATTERING; POWER; ND;

D O I：

10.1364/OL.34.002183

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671 cm(-1) Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1146 nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573 nm yellow laser is obtained. With an incident diode power of 10.9 W and a pulse repetition rate of 20.8 kHz, a yellow-laser power of 0.82 W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%. (C) 2009 Optical Society of America

引用

页码：2183 / 2185

页数：3

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