Synthesis, Characterization and Application Of PbS Quantum Dots

Lead Chalcogenides (PbS, PbSe, PbTe) quantum dots (QDs) are ideal for fundamental studies of strongly quantum confined systems with possible technological applications. Tunable electronic transitions at near - infrared wavelengths can be obtained with these QDs. Applications of lead chalcogenides encompass quite a good number of important field viz. the fields of telecommunications, medical electronics, optoelectronics etc. Very recently, it has been proposed that 'memristor' (Memory resistor) can be realized in nanoscale systems with coupled ionic and electronic transports. The hystersis characteristics of 'memristor' arc observed in many nanoscale electronic devices including semiconductor quantum dot devices. This paper reports synthesis of PbS QDs by chemical route. The fabricated samples are characterized by UV-Vis, XRD, SEM, TEM, EDS, etc. Observed characteristics confirm nano formation. I-V characteristics of the sample are studied for investigating their applications as 'memristor'.