Temperature evolution of topological surface states in Bi2Se3 thin films studied using terahertz spectroscopy

被引：0

作者：

Kamboj, Varun S. ^{[1
]}

Singh, Angadjit ^{[1
]}

Beere, Harvey E. ^{[1
]}

Hesjedal, Thorsten ^{[2
]}

Barnes, Crispin H. W. ^{[1
]}

Ritchie, David A. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, J J Thomson Ave, Cambridge CB3 0HE, England

[2] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England

来源：

TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS X | 2017年 / 10103卷

基金：

英国工程与自然科学研究理事会;

关键词：

terahertz; topological insulators; spectroscopy; bismuth selenide; SINGLE DIRAC CONE; INSULATOR; QUANTUM; BI2TE3; PHASE;

D O I：

10.1117/12.2249587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the terahertz (THz) conductance of a 23 quintuple layer thick film of bismuth selenide (Bi2Se3) and found signatures for topological surface states (TSSs) below 50 K. We provide evidence for a topological phase transition as a function of lattice temperature by optical means. In this work, we used THz time-domain spectroscopy (THz-TDS) to measure the optical conductance of Bi2Se3, revealing metallic behavior at temperatures below 50 K. We measure the THz conductance of Bi2Se3 as 10 e(2)/h at 4 K, indicative of a surface dominated response. Furthermore, the THz conductance spectra reveal characteristic features at similar to 1.9 THz attributed to the optical phonon mode, which is weakly visible at low temperatures but which becomes more prominent with increasing temperature. These results present a first look at the temperature-dependent behavior of TSSs in Bi2Se3 and the capability to selectively identify and address them using THz spectroscopy.

引用

页数：7

共 31 条

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