Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice

被引：10
|
作者：
Nedzinskas, R. [1 ]
Cechavicius, B. [1 ]
Kavaliauskas, J. [1 ]
Karpus, V. [1 ]
Seliuta, D. [1 ]
Tamosiunas, V. [1 ]
Valusis, G. [1 ,2 ]
Fasching, G. [3 ]
Unterrainer, K. [3 ]
Strasser, G. [4 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
[2] Vilnius State Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania
[3] Vienna Univ Technol, Inst Photon, A-1040 Vienna, Austria
[4] SUNY Buffalo, Buffalo, NY 14260 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 06期
关键词：
WANNIER-STARK QUANTIZATION; INFRARED PHOTODETECTORS; PHOTOREFLECTANCE SPECTROSCOPY; LOCALIZATION; LAYER;
D O I：
10.1063/1.3212980
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical transitions in vertically stacked InAs quantum dot (QD) superlattice (SL) with and without AlAs barriers were examined by photo- and electroreflectance techniques. The interband transitions corresponding to the QD, wetting layer (WL), and InAs/GaAs/AlAs SL have been identified. Experimental data and numerical calculations show that blueshifts and enhancement in the intensity of WL-related optical transitions in an InAs/GaAs/AlAs SL originate mainly due to off-center position of the QD layers in the quantum wells. The appearance of multiple WL-related features in the modulated reflectance spectra was revealed and discussed. (C) 2009 American Institute of Physics. [doi:10.1063/1.3212980]
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页数：5
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