High-k metal gate MOSFETs:: Impact of extrinsic process condition on the gate-stack quality -: A mobility study

被引：6

作者：

Trojman, Lionel ^{[1
]}

Ragnarsson, Lars-Ake

O'Sullivan, Barry J.

Rosmeulen, Maarten

Kaushik, Vidya S.

Groeseneken, Guido V.

Maes, Herman E.

De Gendt, Stefan

Heyns, Marc

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

[4] Freescale Semicond, Austin, TX 78721 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 03期

关键词：

bulk defect; carrier mobility; degas; interface layer re-growth; interface state; thermal budget;

D O I：

10.1109/TED.2006.890230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of source/drain activation thermal budget and premetallization degas conditions on interfacial regrowth, carrier mobility, and defect densities are examined for SiO2/HfO2/TaN stacks. We observe a correlation between the mobility degradation and the interfacial re-growth possible with the thermal budget employed. The mobility degradation arises from an increase of defects, both within the interface layer (IL) and the high-kappa bulk, as detected by both pulsed current-voltage and charge-pumping measurements. Two junction activation processes have been applied: a conventional process (peak temperature of 1000 degrees C spike for t = 1 s) and a Solid Phase Epitaxial Re-growth (SPER) (peak temperature of 650 degrees C for t = 60 s). For 1000 degrees C spike-annealed films, where the highest SiO2/IL defect density is observed, the consequent mobility degradation is explained by a transition region between HfO2 and the IL which increases for high-temperature processing.

引用

页码：497 / 503

页数：7

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