Effects of high index plane on device performances of near-infrared InGaAs/GaAs/AlGaAs resonant-cavity light-emitting diodes

The performances of resonant-cavity light-emitting diodes (RCLED) fabricated from triple In0.2Ga0.8As/GaAs/AlGaAs quantum-well structures with GaAs/AlAs distributed Bragg reflectors (DBR) and grown by molecular-beam epitaxy on (100) and (411)A GaAs substrates are investigated. In the structures grown on the (411)A substrate, photoluminescence spectra at room temperature from the quantum wells have a narrower linewidth (full width at half maximum) than the structures grown on (100) substrates and have higher integrated peak intensity. This demonstrates the high quality of the high-index plane materials. The emission energies of the RCLEDs were determined from the electroluminescence spectra done at room temperature and a blue shift is observed for the peak wavelength of the devices made on the (411)A substrate compared with those on (100) confirming similar findings from the photoluminescence experiments. Room-temperature power measurements made at 100 mA showed a 2.9 mW power for the devices made on (411)A while the power of the device made on (100) was 1.5 mW. The RCLED performances are discussed, taking into account the cavity effects, and conclusions are reached on the effects of high index plane.