Synthesis and I-V properties of aligned copper nanowires

被引：38

作者：

Cao, HQ ^{[1
]}

Wang, LD ^{[1
]}

Qiu, Y ^{[1
]}

Zhang, L ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Chem, Key Lab Organ Optoelect & Mol Engn, Minist Educ, Beijing 100084, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 06期

关键词：

D O I：

10.1088/0957-4484/17/6/032

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports the synthesis of well-aligned copper nanowires using an electrochemical deposition template technique. The electrical properties of copper nanowire arrays synthesized within vertical pores of alumina template were measured using a current-sensing atomic force microscope (AFM), with bias voltage applied between the AFM tip and the gold back-electrode. Nonlinear current-voltage (I-V) characteristics of copper nanowire arrays are observed; this is attributed to the impurities near the wire-lead contact region. These vertical copper nanowire arrays are suitable for use in fabricating nanoelectronic devices.

引用

页码：1736 / 1739

页数：4

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