Electrical and structural properties of Cl-doped ZnSe MBE-grown with various doping techniques

In this study, various MBE growth techniques for Cl doping were tried to obtain n-type ZnSe/GaAs of high electrical and crystalline quality. Thr ZnSe layers with high Cl doping concentration which were grown by a conventional uniform doping method contained a high density of stacking faults and dislocations. The initial undoped ZnSe layer on the GaAs substrate played an important role in suppressing stacking faults in ZnSe;Cl layers. Electrochemical C-V and SIMS measurements showed that the electrical efficiency of incorporated Cl atoms in the ZnSe lattice was improved by the delta-doping method. The delta-doping technique was more efficient than the uniform and planar doping methods in improving the electrical and structural properties.