Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys

被引：22

作者：

Fan, Shunfei ^{[1
]}

Qin, Zhixin ^{[1
]}

He, Chenguang ^{[1
]}

Hou, Mengjun ^{[1
]}

Wang, Xinqiang ^{[1
]}

Shen, Bo ^{[1
]}

Li, Wei ^{[2
]}

Wang, Weiying ^{[2
]}

Mao, Defeng ^{[2
]}

Jin, Peng ^{[2
]}

Yan, Jianchang ^{[3
]}

Dong, Peng ^{[3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 21期

基金：

国家高技术研究发展计划(863计划);

关键词：

MULTIPLE-QUANTUM WELLS; TIME-RESOLVED PHOTOLUMINESCENCE; 1ST-PRINCIPLES CALCULATIONS; AL(X)GA1-XN ALLOYS; ALGAN ALLOYS; DYNAMICS; FLUCTUATIONS; LUMINESCENCE; EPILAYERS; SAPPHIRE;

D O I：

10.1364/OE.21.024497

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The exciton localization in wurtzite AlxGa1-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa1-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization. (C) 2013 Optical Society of America

引用

页码：24497 / 24503

页数：7

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