Light emission from silicon-rich nitride nanostructures

被引：41
作者：
Dal Negro, L
Yi, JH
Kimerling, LC
Hamel, S
Williamson, A
Galli, G
机构：
[1] MIT, Cambridge, MA 02139 USA
[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 18期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2191956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500-900 degrees C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices. (c) 2006 American Institute of Physics.
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