A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

被引：18
|
作者：
Zhu, Hua [1 ,2 ,3 ]
Li, Xiuping [1 ,2 ,3 ]
Qi, Zhihang [1 ,2 ,3 ]
Xiao, Jun [1 ,2 ,3 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Key Lab Universal Wireless Commun, Minist Educ, Beijing 100876, Peoples R China
[3] State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China
来源：
IEEE ACCESS | 2020年 / 8卷
关键词：
An octagonal shorted annular ring; on-chip antenna array; terahertz (THz); 130-nm SiGe BiCMOS technology; DIELECTRIC RESONATOR ANTENNA; GAIN;
D O I：
10.1109/ACCESS.2020.2991868
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100 mu m(2). The measured impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.
引用
收藏
页码：84282 / 84289
页数：8
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