INTRINSIC ROOM TEMPERATURE FERROMAGNETISM OF SILICON-DOPED ZnO THIN FILMS

被引：2

作者：

Farooq, M. Hassan ^{[1
]}

Xu, X. G. ^{[1
]}

Yang, H. L. ^{[1
]}

Ran, C. J. ^{[1
]}

Wang, Y. K. ^{[1
]}

Miao, J. ^{[1
]}

Jiang, Y. ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2013年 / 27卷 / 13期

基金：

美国国家科学基金会;

关键词：

ZnO; dilute magnetic semiconductor; doping; DEFECTS;

D O I：

10.1142/S0217984913500929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report our study on the magnetic properties of Si-doped ZnO thin films fabricated by pulsed laser deposition technique. The Si-doped ZnO thin films show ferromagnetism at room temperature. The saturation magnetism increases from 0 to 2.4 emu/cc with the increasing of Si concentration up to 2%, and then decreases with further increasing of Si concentration. First-principles calculation demonstrates that the origination of ferromagnetism for Si-doped ZnO system is the two unpaired electrons of Si-2p. These unpaired electrons increase the magnetic moments which are responsible for the increasing ferromagnetism.

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页数：10

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