Structural and Optical Properties of Electrochemically Grown Highly Crystalline Cu2ZnSnS4 (CZTS) Thin Films

被引：14

作者：

Ananthoju, Balakrishna ^{[1
]}

Kushwaha, Ajay

Sonia, Farjana J.

Aslam, M. ^{[1
]}

机构：

[1] Indian Inst Technol, IITB Monash Res Acad, Bombay 400076, Maharashtra, India

来源：

SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷

关键词：

Copper zinc tin sulfide (CZTS); Electro-deposition; Kesterite phase; Optical properties; photovoltaic;

D O I：

10.1063/1.4791233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated kesterite phase films of Cu2ZnSnS4 (CZTS) using a single bath electrodeposition process followed by sulfurisation. Morphological analysis using SEM shows that the films have densely packed micron size grains. XRD and Raman spectroscopy confirm that grown films are highly crystalline and kesterite in phase. Band gap of electrochemically deposited films is estimated to 1.51 eV by using UV-Vis absorption spectra. Photoluminescence measurements show a single emission peak at 1.5 eV which corresponds to band to band transition of CZTS film. The electrical conductivity measurements of the films show good ohmic behavior of the contacts and the average conductance value is 50 mu S.

引用

页码：706 / 707

页数：2

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