Optimized CMOS-SOI Process for High Performance RF Switches

被引：0
|
作者：
Joshi, A. B. [1 ]
Lee, S. [1 ]
Chen, Y. Y. [1 ]
Lee, T. Y. [1 ]
机构：
[1] Skyworks Solut Inc, Irvine, CA USA
来源：
IEEE INTERNATIONAL SOI CONFERENCE | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Since such applications can involve switching high power levels (35 dBm) at high frequencies (similar to 2 GHz), the technology considerations are substantially different than those for SOI used in high speed, small signal applications such as microprocessors. This paper provides an overview of key technology challenges and trade-offs.
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