The control of abnormal grain growth in low-voltage SnO2 varistors by microseed addition

被引:15
作者
Shahraki, Mohammad Maleki [1 ]
Golmohammad, Mohammad [2 ]
Safaee, Iman [3 ]
Chermahini, Mehdi Delshad [4 ]
机构
[1] Univ Maragheh, Fac Engn, Dept Mat Engn, POB 55181-83111, Maragheh, Iran
[2] Niroo Res Inst, Renewable Energy Dept, Tehran, Iran
[3] Mat & Energy Res Ctr, Semicond Dept, Karaj, Iran
[4] Shahrekord Univ, Fac Engn, Shahrekord, Iran
关键词
Abnormal grain growth; Microseed; SnO2; varistor; Low voltage; ELECTRICAL-PROPERTIES; ZNO VARISTORS; CERAMICS; MICROSTRUCTURE; SYSTEM; TIO2; SIZE;
D O I
10.1016/j.ceramint.2017.11.129
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this research, the addition effects of three different quantities of micron-sized seeds (microseeds) to a SnO2 varistor prepared from nanomaterials on the microstructure and electrical properties were studied. Moreover, surge-withstanding capability of low-voltage SnO2 varistors was investigated. The X-ray diffraction pattern disclosed a single phase SnO2 for microseed grains. The morphological features of samples were characterized using scanning electron microscopy. The abnormal distribution of grain size with elongated grains of SnO2 in fine grains matrix was observed in sintered samples without microseeds. The low content of microseed addition (0.3 wt%) had not controlled abnormal grain growth, however, it increased mean grain size to 37 gm. Although the high content of microseeds (7.5 wt%) stopped abnormal grain growth, it had a negative effect on relative density and mean grain size. The normal grain size distribution with maximum mean grain size (45 pm) was obtained in samples containing 1.5 wt% microseeds. These samples showed the lowest breakdown field (240 V/cm) and the highest surge-withstanding capability (1.5 kA/cm(2)). Furthermore, the standard deviation of the electrical parameters of these samples was improved due to normal grain-size distribution.
引用
收藏
页码:3388 / 3393
页数:6
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