Heteroepitaxial growth and structural characterization of rutile TiO2 thin films on GaN (0001) templates prepared by pulsed laser deposition

被引：3

作者：

Mei, Fei ^{[1
]}

Xiao, Xiangheng ^{[2
,3
,4
]}

Xu, Jinxia ^{[1
,2
,3
]}

Zhou, Yuanming ^{[1
]}

Zhang, Danming ^{[1
]}

机构：

[1] Hubei Univ Technol, Sch Elect & Elect Engn, Wuhan 430068, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

[3] Wuhan Univ, Ctr Electron Microscopy, Wuhan 430072, Peoples R China

[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷

基金：

中国国家自然科学基金;

关键词：

TiO2 thin films; GaN; Rutile; Pulsed laser deposition; CHEMICAL-VAPOR-DEPOSITION; INSULATOR-SEMICONDUCTOR STRUCTURES; MOLECULAR-BEAM EPITAXY; OXIDE; DIELECTRICS; TRANSISTORS; SIO2/N-GAN; ALGAN/GAN; SUBSTRATE; ANATASE;

D O I：

10.1016/j.nimb.2013.01.091

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Rutile TiO2 (1 0 0) thin films have been prepared on GaN (0 0 0 1) surfaces in the temperature range 300-600 degrees C by pulsed laser deposition (PLD) method. The effects of both the oxygen pressure and the substrate temperature on the properties of the TiO2 films were investigated. TiO2 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscope (TEM). Optimum parameters have been determined for growing high-quality TiO2 thin films with a sharp interface, in which the epitaxial orientation relationship between rutile TiO2 and GaN is TiO2 [001] //GaN [11 (2) over bar0]. The surface morphology of TiO2 thin films exhibited a marked dependence on the substrate temperature, and the better crystallinity of the TiO2 thin films can be obtained at lower oxygen pressure. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：477 / 481

页数：5

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