n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis

被引：15
作者：
de Nicolas, S. Martin [1 ]
Coignus, J. [1 ]
Favre, W. [1 ,2 ]
Kleider, J. P. [2 ]
Munoz, D. [1 ]
机构：
[1] CEA INES, F-73375 Le Bourget Du Lac, France
[2] Univ Paris 06, Univ Paris 11, SUPELEC, Lab Genie Elect Paris,CNRS UMR 8507, F-91192 Gif Sur Yvette, France
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 115卷
关键词：
Amorphous silicon; Heterojunction; Solar cells; Passivation; Back surface field; Band structure; GAP STATES; CRYSTALLINE; SILICON; PARAMETERIZATION;
D O I：
10.1016/j.solmat.2013.03.010
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, we focus on the comprehension and optimization of the rear side of n-type amorphous/crystalline (a-Si:H/c-Si) heterojunction solar cells. The back amorphous stack and the role of the heterointerface have been investigated in order to elucidate the basic mechanisms governing device performance. Thus, thin amorphous silicon films with different phosphorous contents have been deposited by PECVD and extensively characterised (optical, electrical, and structural properties have been studied). Moreover, the passivation and the interface properties of such different a-Si:H thin films on crystalline silicon surface have been also investigated by Quasi-Steady-State Photoconductance (QSSPC) measurements. The effect of the doping content of the amorphous back-surface-field was deeply analysed and simulated in order to explain the observed tendencies on solar cell precursors. The influence of defect density and activation energy on the carrier transport properties varying with the doping of thin a-Si:H layers has been widely investigated. Furthermore, optimized heterojunction solar cells have been fabricated and an efficiency of 20.5% on n-type 148 cm(2) silicon wafer has been achieved, (C) 2013 Elsevier B.V. All rights reserved.
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页码：129 / 137
页数：9
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