Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes

被引：83

作者：

Borzenets, I. V. ^{[1
]}

Amet, F. ^{[2
]}

Ke, C. T. ^{[3
]}

Draelos, A. W. ^{[3
]}

Wei, M. T. ^{[3
]}

Seredinski, A. ^{[3
]}

Watanabe, K. ^{[4
]}

Taniguchi, T. ^{[4
]}

Bomze, Y. ^{[3
]}

Yamamoto, M. ^{[5
]}

Tarucha, S. ^{[1
,6
]}

Finkelstein, G. ^{[3
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Appalachian State Univ, Dept Phys & Astron, Boone, NC 28607 USA

[3] Duke Univ, Dept Phys, Durham, NC 27708 USA

[4] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[5] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

[6] RIKEN, Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 117卷 / 23期

基金：

美国国家科学基金会;

关键词：

SUPERCONDUCTORS; SUPERCURRENT; CONTACT;

D O I：

10.1103/PhysRevLett.117.237002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the critical current I-C of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I-C is found to scale as proportional to exp(-k(B)T/delta E). The extracted energies delta E are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T -> 0 the critical current of a long (or short) junction saturates at a level determined by the product of dE (or Delta) and the number of the junction's transversal modes.

引用

页数：5

共 38 条

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