Comparative study of spin coated and sputtered PMMA as an etch mask for silicon micromachining

被引：3

作者：

Bodas, DS ^{[1
]}

Dabhade, RV ^{[1
]}

Patil, SJ ^{[1
]}

Gangal, SA ^{[1
]}

机构：

[1] Univ Pune, Dept Elect Sci, Pune 411007, Maharashtra, India

来源：

MHS2001: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON MICROMECHATRONICS AND HUMAN SCIENCE | 2001年

关键词：

D O I：

10.1109/MHS.2001.965221

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Polymers can be very good alternatives to SiO2 and Si3N4, which are normally used to mask the anisotropic etching of silicon in anisotropic etchants like KOH. An adherent PMMA layer can be conveniently used as a mask material as it is cheaper easily deposited and removed. In this regard a comparative study of spin coated PMMA with sputtered PMMA as an etch mask for silicon micromachining is carried out. The maximum masking time of 32min in 80degreesC 20wt% KOH was obtained for spin coated PMMA samples, which were prebaked at 90degreesC. As this masking time is insufficient for fabrication of various MEMS structures, sputter deposition of PMMA films was carried out in which a masking time of 300min as against 32min was obtained under similar conditions.

引用

页码：51 / 56

页数：6

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