Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

被引：5
作者：
Lee, Dong Uk [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
Cho, Won-Ju [3 ]
Kim, Young-Ho [4 ]
Im, Hyunsik [5 ]
机构：
[1] Hanyang Univ, Quantum Funct Res Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[5] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea
来源：
THIN SOLID FILMS | 2012年 / 521卷
关键词：
Nano-crystals; Hybrid; SnO2; Nonvolatile memory; Resistance random access memory; Polyimide; NONVOLATILE MEMORY; TRANSISTORS;
D O I：
10.1016/j.tsf.2012.02.044
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of +/- 4 V and +/- 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 x 10(4) at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 x 10(3) after 10(3) s. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：98 / 101
页数：4
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